Samsung 990 PRO PCIe 4.0 NVMe SSD, 4TB

MX00127365 990 PRO PCIe 4.0 NVMe SSD, 4TB
MX00127365 990 PRO PCIe 4.0 NVMe SSD, 4TB MX00127365 990 PRO PCIe 4.0 NVMe SSD, 4TB MX00127365 990 PRO PCIe 4.0 NVMe SSD, 4TB MX00127365 990 PRO PCIe 4.0 NVMe SSD, 4TB

Product Info

990 PRO SSD – Our Ultimate SSD

Reach near max performance with PCIe® 4.0.

The in-house controller's smart heat control delivers our best power efficiency while maintaining ferocious performance that always keeps you at the top of your game.

* PCIe 4.0's best theoretical sequential read is 8000 MB/s - 990 PRO reaches 7450 MB/s as of Q3, 2022.

  • Gen4 steps up to the arena with more than 55% improvement in random performance compared to 980 PRO.
  • Designed for tech enthusiasts, hardcore gamers and heavy-workload professionals who want blazing fast speed.
  • Enjoy up to 50% improved performance per watt over 980 PRO, plus optimal power efficiency with max PCIe® 4.0 performance.
  • Sequential read/write speeds up to 7,450/6,900 MB/s.
  • Give yourself some space with storage capacities from 1TB to 4TB.


Maximized PCIe 4.0 Speed

Get random read/write speeds that are 40%/55% faster than 980 PRO. Experience up to 1400K/1550K IOPS, while sequential read/write speeds up to 7450/6900 MB/s reach near the max performance of PCIe 4.0.1,2,3 Fly high in gaming, video editing, 3D modeling, data analysis and more.

1. Sequential and random write performance was measured with Intelligent Turbo Write technology being activated. Intelligent Turbo Write operates only within a specific data transfer size. Performance may vary depending on SSD’s firmware, system hardware & configuration and other factors. For detailed information, please contact your local service center.
2. 990 PRO reaches 7,450 MB/s based on test system configuration: AMD Ryzen 7 5800X 8-Core Processor [email protected], DDR4 3600MHz 16GBx2 (PC4-25600 Overclock), OS - Windows 10 Pro 64bit, Chipset - ASRock-X570 Taichi.
3. To maximize the performance of the 990 PRO, please check whether your system supports PCIe 4.0 at the Intel or AMD website.

Breakthrough Power Efficiency

Get more performance while using less power. Enjoy up to 50% improved performance per watt over 980 PRO*.

* 980 PRO Sequential Read/Write - 1,129/877 MB/Watt, 990 PRO Sequential Read/Write - 1380/1319 MB/Watt based on test result of 1TB capacity model.

Smart Thermal Control

Samsung's own nickel-coated high-end controller delivers effective thermal control and prevents sudden performance drops from overheating. 

The Champion Maker

A more than 55% improvement in random performance1 enables faster loads for an ultimate gaming experience on PS5 and DirectStorage PC games2.

1. As compared to 980 PRO
2. Direct Storage technology from Microsoft loads games faster than before by leveraging the multiple GB/sec speed of modern NVMe SSDs.

Samsung Magician Software

Unlock the full potential of 990 PRO with Samsung Magician. Get the most out of your SSD with Samsung Magician's advanced yet intuitive optimization tools. Monitor drive health, protect valuable data, receive important updates and set up LED color combinations for your 990 PRO. It's your personal SSD toolkit.

World's No. 1 Flash Memory

Experience the performance and reliability that you can only get from the world's number one brand for flash memory since 2003. All firmware and components, including Samsung's world-renowned DRAM and NAND, are produced in-house, allowing end-to-end integration for quality you can trust.

* Source: 2003~1H.2022 OMDIA data - NAND suppliers' revenue market share.

Additional Information:

Visit the Manufacturer Product Web Page for Full Details


Make and Model Samsung 990 PRO PCIe 4.0 NVMe M.2 SSD
Part Number MZ-V9P4T0B/AM
Capacity 4TB
Formatted capacity is less due to O/S formatting, partitioning, applications, etc.
Form Factor M.2 2280
Interface PCIe Gen 4.0 x4
NVMe 2.0
Sequential Bandwidth Sequential Reads: Up to 7,450 MB/sec*
Sequential Writes: Up to 6,900 MB/sec*
Random IOPS

4KB, QD32 Random Read: Up to 1,600,000 IOPS*
4KB, QD1 Random Read: Up to 22,000 IOPS*

4KB, QD32 Random Write: Up to 1,550,000 IOPS*
4KB, QD1 Random Write: Up to 80,000 IOPS*

Cache Memory 4GB Low Power DDR4 SDRAM
Controller Samsung in-house controller
Flash Type Samsung V-NAND 3-bit MLC
AES Encryption AES 256 - bit Encryption (Class 0) TCG / Opal IEEE1667 (Encrypted drive)
Garbage Collection Auto Garbage Collection Algorithm
TRIM Support Yes
S.M.A.R.T. Support Yes
MTBF 1.5 Million Hours Reliability (MTBF)
Endurance Total Bytes Written: 2400TB Written
Temperature Operating: 0 ~ 70° C
Shock 1,500G for 0.5ms (Half Sine Wave)
Power Idle: 55mW max.
Average: 6.5W Typical
Maximum: 8.6W (Burst Mode)
Voltage 3.3V ± 5 % Allowable voltage
Dimensions (WxHxD) 80 x 22 x 2.3 mm
Weight Approx. 9g